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Brief Description of Diode's Working Principle
2018-11-08 17:21:33
Diodes, electronic components, a device with two electrodes, allowing only current to flow in a single direction, many of which are used to rectify the function.
Crystal diode is a p n junction formed by p-type semiconductor and n-type semiconductor. Space charge layer is formed on both sides of its interface and self-built electric field is built. When there is no applied voltage, the diffusion current caused by the carrier concentration difference on both sides of the PN junction is equal to the drift current caused by the built-in electric field, so it is in the state of electric equilibrium. When there is a positive voltage bias, the interaction between the external electric field and the self-built electric field causes the increase of carrier diffusion current and the positive current. When there is reverse voltage bias, the external electric field and the self-built electric field are further strengthened, and the reverse saturated current I0 independent of the reverse bias voltage is formed in a certain range of reverse voltage. When the applied reverse voltage is high to a certain extent, the electric field intensity in the space charge layer of the PN junction reaches the critical value, resulting in the multiplying process of carriers, a large number of electron hole pairs and a large number of reverse breakdown currents, which are called diode breakdown phenomena. The reverse breakdown of PN junction can be divided into Zener breakdown and avalanche breakdown.
Crystal diode is a p n junction formed by p-type semiconductor and n-type semiconductor. Space charge layer is formed on both sides of its interface and self-built electric field is built. When there is no applied voltage, the diffusion current caused by the carrier concentration difference on both sides of the PN junction is equal to the drift current caused by the built-in electric field, so it is in the state of electric equilibrium. When there is a positive voltage bias, the interaction between the external electric field and the self-built electric field causes the increase of carrier diffusion current and the positive current. When there is reverse voltage bias, the external electric field and the self-built electric field are further strengthened, and the reverse saturated current I0 independent of the reverse bias voltage is formed in a certain range of reverse voltage. When the applied reverse voltage is high to a certain extent, the electric field intensity in the space charge layer of the PN junction reaches the critical value, resulting in the multiplying process of carriers, a large number of electron hole pairs and a large number of reverse breakdown currents, which are called diode breakdown phenomena. The reverse breakdown of PN junction can be divided into Zener breakdown and avalanche breakdown.